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instantaneous Reverse Leakage
Current (UA) instantaneous FonNard Current (A)
0.01-‘-nj - - - - EGPSUF and EGP3DG0.2 0.4 0.6 0.5 1.0 1.2 1.4 1.6
am
Too
G
01
EGP3oA trim EGPJDD
u.-
instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous FonNard Characteristics
ion
in
.0
Percent of Rated Peak Reverse Voltage (%)
Fig. A - Typical Reverse Leakage Characteristics
210
EGP30A, EGP30B, EGP30c, EGP30D, EGP30F, EGP3oG
wwwymhayeom
Vishay General Semiconductor
Tao
T50
T20
90
60
Junction Capacitance (pF)
so
GP3uA tnru EGPSDD
T00
Transient Thermal impedance (“C/W)
a
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE ouTLINE DIMENSIONS in inches (millimeters)
GP20
ozms 3)a ‘soil; 8)DlA
0.042 (1 07)0.037 (0 94)DIA
Revision: 15?Aug-13
For technical questions within your region: DiodesArnericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com3Document N umber: 88584
—>‘
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
t- Pulse Duration (s)
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