| ‘lllvVISHAYQV instantaneous Reverse Leakage Current (UA) instantaneous FonNard Current (A) 0.01-‘-nj - - - - EGPSUF and EGP3DG0.2 0.4 0.6 0.5 1.0 1.2 1.4 1.6 am Too G 01 EGP3oA trim EGPJDD u.- instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous FonNard Characteristics ion in .0 Percent of Rated Peak Reverse Voltage (%) Fig. A - Typical Reverse Leakage Characteristics 210 EGP30A, EGP30B, EGP30c, EGP30D, EGP30F, EGP3oG wwwymhayeom Vishay General Semiconductor Tao T50 T20 90 60 Junction Capacitance (pF) so GP3uA tnru EGPSDD T00 Transient Thermal impedance (“C/W) a Fig. 6 - Typical Transient Thermal Impedance PACKAGE ouTLINE DIMENSIONS in inches (millimeters) GP20 ozms 3)a ‘soil; 8)DlA 0.042 (1 07)0.037 (0 94)DIA Revision: 15?Aug-13 For technical questions within your region: DiodesArnericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com3Document N umber: 88584 —>‘ Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance t- Pulse Duration (s) THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |